Evaluation of Materials for 193-nm Lithography.

TiSi-nitride attenuating phase-shift photomask for 193 nm lithography

G. A. M. Reynolds, R. H. French, P. F. Carcia, C. C. Torardi, G. Hughes, D. J. Jones, M. F. Lemon, M. Reilly, L. Wilson, C. R. Miao “TiSi-nitride attenuating phase-shift photomask for 193 nm lithography”, 18th Annual BACUS Symposium on Photomask Technology and Management, SPIE Vol. 3546, Edited by B. J. Grenon, F. E. Abboud, 514-23, (1998). TiSi-nitride attenuating phase-shift photomask for 193...

Alternatives to Chemical Amplification for 193 nm Lithography

Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensit...

Testing of Optical Materials for 193-nm Applications

We present an assessment of bulk fused silica and calcium fluoride, and of antireflective coatings for 193-nm lithographic applications. In the course of extensive marathon studies we have accumulated 1-5 billion laser pulses on over 100 bulk material samples at fluences from 0.2 to 4 mJ/cm/pulse. The results show large variation in both initial and induced absorption of fused silica (up to 40x...

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...

Scale-space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures